NTD85N02RT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

24V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20A, 10V

Avalanche Energy Rating (Eas) :

85 mJ

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0052Ohm

Drain Current-Max (Abs) (ID) :

85A

DS Breakdown Voltage-Min :

24V

Input Capacitance (Ciss) (Max) @ Vds :

2.05pF @ 20V

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

JESD-609 Code :

e3

Case Connection :

DRAIN

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

12A Ta 85A Tc

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.25W Ta 78.1W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

17.7nC @ 5V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

192A

Packaging :

Tape and Reel (TR)

Number of Elements :

1