NTD80N02-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 80A, 10V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

733 mJ

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

3V @ 250µA

DS Breakdown Voltage-Min :

24V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

200A

Drain Current-Max (Abs) (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

75W Tc

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

24V

Number of Elements :

1

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2.6pF @ 20V

Drain-source On Resistance-Max :

0.0058ohm

Pbfree Code :

No

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

3