NTD80N02-001

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

200A

Avalanche Energy Rating (Eas) :

733 mJ

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 80A, 10V

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Number of Elements :

1

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

2.6pF @ 20V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

80A

Drain-source On Resistance-Max :

0.0058ohm

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

24V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

JESD-609 Code :

e0

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Element Material :

SILICON

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Terminal Finish :

TIN LEAD

FET Type :

N-Channel

Number of Terminations :

3

Power Dissipation-Max :

75W Tc

DS Breakdown Voltage-Min :

24V

Packaging :

Tube

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Peak Reflow Temperature (Cel) :

240

JESD-30 Code :

R-PSIP-T3