NTD80N02-001

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN LEAD

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

2.6pF @ 20V

Number of Elements :

1

FET Type :

N-Channel

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 80A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Drain-source On Resistance-Max :

0.0058ohm

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

200A

Pin Count :

3

Number of Terminations :

3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

240

Power Dissipation-Max :

75W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

24V

JESD-609 Code :

e0

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

24V

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

733 mJ

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

80A