NTD85N02R

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

240

Terminal Finish :

Tin/Lead (Sn/Pb)

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 20V

Pulsed Drain Current-Max (IDM) :

192A

Power Dissipation :

2.4W

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

77ns

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Fall Time (Typ) :

12 ns

Number of Elements :

1

Published :

2007

Turn-Off Delay Time :

25 ns

Drain-source On Resistance-Max :

0.0052Ohm

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

12A Ta 85A Tc

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

HTS Code :

8541.29.00.95

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20A, 10V

Case Connection :

DRAIN

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

12A

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

17.7nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.25W Ta 78.1W Tc

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

85A

Mount :

Surface Mount

Current Rating :

85A

Drain to Source Breakdown Voltage :

24V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

24V

Avalanche Energy Rating (Eas) :

85 mJ