NTD80N02G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Fall Time (Typ) :

40 ns

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 80A, 10V

Pulsed Drain Current-Max (IDM) :

200A

Avalanche Energy Rating (Eas) :

733 mJ

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0058ohm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 4.5V

Published :

2009

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Voltage - Rated DC :

24V

Packaging :

Tube

Transistor Element Material :

SILICON

Turn-Off Delay Time :

28 ns

Drain to Source Breakdown Voltage :

24V

Rise Time :

67ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

75W Tc

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Current Rating :

80A

Case Connection :

DRAIN

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 20V

Power Dissipation :

75W

Peak Reflow Temperature (Cel) :

260