NTD80N02

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Mfr.Part #
NTD80N02
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 24V 80A DPAK
Stock
8,808
In Stock :
8,808

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e0
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Drain-source On Resistance-Max :
0.0058ohm
Pulsed Drain Current-Max (IDM) :
200A
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Finish :
TIN LEAD
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Terminations :
2
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Vgs(th) (Max) @ Id :
3V @ 250µA
RoHS Status :
Non-RoHS Compliant
Drain to Source Voltage (Vdss) :
24V
Qualification Status :
COMMERCIAL
Drain Current-Max (Abs) (ID) :
80A
Rds On (Max) @ Id, Vgs :
5.8m Ω @ 80A, 10V
Number of Elements :
1
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Input Capacitance (Ciss) (Max) @ Vds :
2.6pF @ 20V
Pin Count :
3
DS Breakdown Voltage-Min :
24V
Avalanche Energy Rating (Eas) :
733 mJ
Peak Reflow Temperature (Cel) :
240
Power Dissipation-Max :
75W Tc
Terminal Form :
Gull wing
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Datasheets
NTD80N02
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD80N02 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, NTD80N02 pinout, NTD80N02 datasheet PDF, NTD80N02 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD80N02 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD80N02


N-Channel Tape & Reel (TR) 5.8m Ω @ 80A, 10V ±20V 2.6pF @ 20V 42nC @ 4.5V 24V TO-252-3, DPak (2 Leads + Tab), SC-63

NTD80N02T4 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 733 mJ.A device's maximal input capacitance is 2.6pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 80A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 24V.This transistor requires a 24V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NTD80N02T4 Features


the avalanche energy rating (Eas) is 733 mJ
based on its rated peak drain current 200A.
a 24V drain to source voltage (Vdss)


NTD80N02T4 Applications


There are a lot of Rochester Electronics, LLC
NTD80N02T4 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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