NTD85N02R-001

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

85A

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain to Source Voltage (Vdss) :

24V

Surface Mount :

No

JESD-609 Code :

e0

Current - Continuous Drain (Id) @ 25°C :

12A Ta 85A Tc

Avalanche Energy Rating (Eas) :

85 mJ

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20A, 10V

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

1.25W Ta 78.1W Tc

Pbfree Code :

No

Terminal Position :

Single

FET Type :

N-Channel

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0052Ohm

Gate Charge (Qg) (Max) @ Vgs :

17.7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

2.05pF @ 20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

TIN LEAD

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

192A

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

240

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

24V