NSVMMBTH10LT1G

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Mfr.Part #
NSVMMBTH10LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF TRANS NPN 25V 650MHZ SOT23
Stock
3,541
In Stock :
3,541

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - RF
Emitter Base Voltage (VEBO) :
25V
JESD-609 Code :
e3
Pin Count :
3
Factory Lead Time :
8 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
Max Collector Current :
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 4mA 10V
Transition Frequency :
650MHz
ECCN Code :
EAR99
Surface Mount :
yes
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
NPN
Number of Pins :
3
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
25V
Collector Emitter Breakdown Voltage :
25V
Halogen Free :
Halogen Free
Max Power Dissipation :
225mW
Height :
1.11mm
Published :
2012
Packaging :
Tape and Reel (TR)
Base Part Number :
MMBTH10
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
3.04mm
Collector Emitter Saturation Voltage :
500mV
Lead Free :
Lead Free
Width :
2.64mm
Max Frequency :
100MHz
Element Configuration :
Single
Mounting Type :
Surface Mount
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
30V
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Frequency - Transition :
650MHz
Datasheets
NSVMMBTH10LT1G
Introducing Transistors - Bipolar (BJT) - RF onsemi NSVMMBTH10LT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Base Part Number:MMBTH10, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, NSVMMBTH10LT1G pinout, NSVMMBTH10LT1G datasheet PDF, NSVMMBTH10LT1G amp .Beyond Transistors - Bipolar (BJT) - RF onsemi NSVMMBTH10LT1G ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVMMBTH10LT1G


NSVMMBTH10LT1G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at

Description:

The NSVMMBTH10LT1G is a NPN Bipolar Transistor from ON Semiconductor. It is designed for use in RF applications such as VHF mixers. It is housed in a SOT-23 package and has a maximum collector-emitter voltage of 25V.

Features:

• NPN Bipolar Transistor
• Designed for RF applications
• Maximum collector-emitter voltage of 25V
• Housed in a SOT-23 package
• Low noise and high gain

Applications:

• VHF mixers
• RF amplifiers
• RF switches
• RF detectors
• RF oscillators
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