NSVMMBT3906TT1G

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Mfr.Part #
NSVMMBT3906TT1G
Manufacturer
onsemi
Package / Case
SC-75, SOT-416
Datasheet
Download
Description
TRANS PNP 40V 0.2A SC75 SOT416
Stock
1,166
In Stock :
1,166

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
250MHz
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Breakdown Voltage :
40V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 1V
Power - Max :
200mW
Max Power Dissipation :
200mW
Terminal Form :
Gull wing
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Frequency - Transition :
250MHz
JESD-30 Code :
R-PDSO-G3
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Max Collector Current :
200mA
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Polarity/Channel Type :
PNP
Package / Case :
SC-75, SOT-416
Number of Terminations :
3
Mounting Type :
Surface Mount
Factory Lead Time :
8 Weeks
JESD-609 Code :
e3
Published :
2006
Series :
Automotive, AEC-Q101
Transistor Type :
PNP
Transistor Application :
AMPLIFIER
Number of Elements :
1
Transistor Element Material :
SILICON
Turn Off Time-Max (toff) :
300ns
Mount :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 50mA
Configuration :
Single
Turn On Time-Max (ton) :
70ns
Collector Emitter Voltage (VCEO) :
400mV
Datasheets
NSVMMBT3906TT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSVMMBT3906TT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:SC-75, SOT-416, Number of Terminations:3, Mounting Type:Surface Mount, NSVMMBT3906TT1G pinout, NSVMMBT3906TT1G datasheet PDF, NSVMMBT3906TT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSVMMBT3906TT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVMMBT3906TT1G


PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount

NSVMMBT3906TT1G Overview


In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

NSVMMBT3906TT1G Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz


NSVMMBT3906TT1G Applications


There are a lot of ON Semiconductor
NSVMMBT3906TT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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