NSVMMBT3906TT1G
- Mfr.Part #
- NSVMMBT3906TT1G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SC75 SOT416
- Stock
- 1,166
- In Stock :
- 1,166
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 250MHz
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Power - Max :
- 200mW
- Max Power Dissipation :
- 200mW
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Frequency - Transition :
- 250MHz
- JESD-30 Code :
- R-PDSO-G3
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 200mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- PNP
- Package / Case :
- SC-75, SOT-416
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Published :
- 2006
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Turn Off Time-Max (toff) :
- 300ns
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 70ns
- Collector Emitter Voltage (VCEO) :
- 400mV
- Datasheets
- NSVMMBT3906TT1G

PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
NSVMMBT3906TT1G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
NSVMMBT3906TT1G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz
NSVMMBT3906TT1G Applications
There are a lot of ON Semiconductor
NSVMMBT3906TT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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