NSBC143ZDXV6T1
- Mfr.Part #
- NSBC143ZDXV6T1
- Manufacturer
- onsemi
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.5W SOT563
- Stock
- 12,421
- In Stock :
- 12,421
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Weight :
- 8.193012mg
- Element Configuration :
- Dual
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Pin Count :
- 6
- Continuous Collector Current :
- 100mA
- Package / Case :
- SOT-563, SOT-666
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO 10
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 6
- Polarity :
- NPN
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 2
- Surface Mount :
- yes
- Width :
- 1.2mm
- Published :
- 2006
- Max Breakdown Voltage :
- 50V
- Resistor - Base (R1) :
- 4.7k Ω
- Length :
- 1.6mm
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Current Rating :
- 100mA
- Terminal Form :
- Flat
- hFE Min :
- 80
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- NSBC1*
- Number of Terminations :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 500mW
- Height :
- 550μm
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Resistor - Emitter Base (R2) :
- 47k Ω
- Voltage - Rated DC :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- NSBC143ZDXV6T1

NSBC143ZDXV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
Features of the ON Semiconductor NSBC143ZDXV6T1G include:
• Low collector-emitter saturation voltage of 0.5V
• Low collector-emitter leakage current of 0.1uA
• High gain bandwidth product of 1.2GHz
• High current gain of 200
• RoHS compliant
• Suitable for use in a wide range of applications
Applications of the ON Semiconductor NSBC143ZDXV6T1G include:
• Portable electronics
• Consumer electronics
• Automotive applications
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