NSBC114EPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Polarity :

NPN, PNP

Published :

2008

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Terminal Form :

Flat

Max Operating Temperature :

150°C

hFE Min :

35

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Resistor - Emitter Base (R2) :

10k Ω

Package / Case :

SOT-963

Min Operating Temperature :

-55°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1.0

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Number of Elements :

2

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Qualification Status :

Not Qualified

Resistor - Base (R1) :

10k Ω

ECCN Code :

EAR99

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pin Count :

6

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

NSBC1*

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Max Power Dissipation :

339mW