NSBC113EPDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

3

Width :

1.2mm

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

100mA

Package / Case :

SOT-563-6

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Surface Mount :

yes

Qualification Status :

Not Qualified

Factory Lead Time :

17 Weeks

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

550μm

Max Operating Temperature :

150°C

Weight :

8.193012mg

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Published :

2012

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Power Dissipation :

500mW

Collector Emitter Voltage (VCEO) :

250mV

Number of Elements :

2

Length :

1.6mm

Element Configuration :

Dual

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

DC Current Gain-Min (hFE) :

3

Max Breakdown Voltage :

50V

Polarity :

NPN

Number of Pins :

6

Terminal Form :

Flat

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)