NSBC113EDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Elements :

2

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Collector Current :

100mA

JESD-30 Code :

R-PDSO-F6

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount

Published :

2005

Collector Emitter Voltage (VCEO) :

250mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

6

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

Current Rating :

100mA

Base Part Number :

NSBC1*

JESD-609 Code :

e3

Transistor Type :

2 NPN - Pre-Biased (Dual)

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Resistor - Base (R1) :

1k Ω

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Max Power Dissipation :

500mW

Resistor - Emitter Base (R2) :

1k Ω

Peak Reflow Temperature (Cel) :

240

Package / Case :

SOT-563, SOT-666