NSBC114EDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

35

Lead Free :

Lead Free

Number of Pins :

6

Published :

2006

Transistor Type :

2 NPN - Pre-Biased (Dual)

Factory Lead Time :

17 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Polarity :

NPN

Voltage - Rated DC :

50V

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Elements :

2

Continuous Collector Current :

100mA

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation :

357mW

Resistor - Base (R1) :

10k Ω

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Package / Case :

SOT-563, SOT-666

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

10k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Pin Count :

6

Number of Terminations :

6

Element Configuration :

Dual

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Max Power Dissipation :

500mW

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

NSBC1*

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Surface Mount :

yes

Current Rating :

100mA

Peak Reflow Temperature (Cel) :

260