NSBC124EPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Number of Elements :

2

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

22k Ω

Collector Emitter Breakdown Voltage :

50V

Published :

2008

Max Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Base Part Number :

NSBC1*

Element Configuration :

Dual

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Current Rating :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Power Dissipation :

500mW

Terminal Form :

Flat

Voltage - Rated DC :

50V

Package / Case :

SOT-563, SOT-666

Continuous Collector Current :

100mA

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN, PNP

Pin Count :

6

Number of Pins :

6

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Resistor - Emitter Base (R2) :

22k Ω

Radiation Hardening :

No

JESD-609 Code :

e3

Power Dissipation :

357mW

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

60

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99