NSBC124EPDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

60

Current Rating :

100mA

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Pbfree Code :

yes

Number of Pins :

6

Resistor - Emitter Base (R2) :

22k Ω

Max Power Dissipation :

500mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Surface Mount :

yes

Lead Free :

Lead Free

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

22k Ω

Min Operating Temperature :

-55°C

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Continuous Collector Current :

100mA

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Base Part Number :

NSBC1*

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Element Configuration :

Dual

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Pin Count :

6

Voltage - Rated DC :

50V

Power Dissipation :

357mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

2 Weeks

Published :

2008

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)