NSBC124EDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Base Part Number :

NSBC1*

Continuous Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

500mW

Current Rating :

100mA

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Width :

1.2mm

Mounting Type :

Surface Mount

Pin Count :

6

Pbfree Code :

yes

Number of Pins :

6

Lead Free :

Lead Free

Polarity :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

SOT-563, SOT-666

Max Collector Current :

100mA

Resistor - Emitter Base (R2) :

22k Ω

Voltage - Rated DC :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

6

Resistor - Base (R1) :

22k Ω

Published :

2010

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Element Configuration :

Dual

Surface Mount :

yes

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

2 Weeks

Collector Emitter Breakdown Voltage :

50V

Height :

550μm

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Length :

1.6mm

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Weight :

8.193012mg

Max Operating Temperature :

150°C

hFE Min :

60