NSBC123TPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Mounting Type :

Surface Mount

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Surface Mount :

yes

Radiation Hardening :

No

Resistor - Base (R1) :

2.2k Ω

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max) :

500nA

Polarity :

NPN, PNP

Published :

2008

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

231mW

Max Operating Temperature :

150°C

Terminal Form :

Flat

Lead Free :

Lead Free

Additional Feature :

BUILT IN BIAS RESISTOR RATIO

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

hFE Min :

160

Transistor Application :

SWITCHING

Package / Case :

SOT-963

Max Power Dissipation :

339mW

Pin Count :

6

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Continuous Collector Current :

100mA