NSBC123JPDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

500mW

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Resistor - Emitter Base (R2) :

47k Ω

Transistor Application :

SWITCHING

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Height :

550μm

Terminal Form :

Flat

Voltage - Rated DC :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

2

Max Collector Current :

100mA

Current Rating :

100mA

Pin Count :

6

Mounting Type :

Surface Mount

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

50V

Polarity :

NPN, PNP

ECCN Code :

EAR99

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Surface Mount :

yes

Max Operating Temperature :

150°C

Factory Lead Time :

2 Weeks

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

Length :

1.6mm

Packaging :

Tape and Reel (TR)

Weight :

8.193012mg

hFE Min :

80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V

Published :

2010

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Width :

1.2mm

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

2.2k Ω

Element Configuration :

Dual

Base Part Number :

NSBC1*

Pbfree Code :

yes