NSBC123JPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e3

Max Power Dissipation :

339mW

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Polarity :

NPN, PNP

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

47k Ω

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Package / Case :

SOT-963

ECCN Code :

EAR99

Number of Pins :

6

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Published :

2008

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Resistor - Base (R1) :

2.2k Ω

Surface Mount :

yes

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 0.047

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

hFE Min :

80

Transistor Type :

2 NPN - Pre-Biased (Dual)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Terminations :

6

Number of Elements :

2

Base Part Number :

NSBC1*

Pin Count :

6