NSBC123JDXV6T1

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Mfr.Part #
NSBC123JDXV6T1
Manufacturer
onsemi
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS 2NPN PREBIAS 0.5W SOT563
Stock
20,669
In Stock :
20,669

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
hFE Min :
80
Number of Elements :
2
Max Operating Temperature :
150°C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
6
Published :
2012
Transistor Application :
SWITCHING
Continuous Collector Current :
100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Polarity :
NPN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300μA, 10mA
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Max Power Dissipation :
500mW
Terminal Form :
Flat
Package / Case :
SOT-563, SOT-666
Current - Collector Cutoff (Max) :
500nA
Pbfree Code :
yes
Pin Count :
6
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA 10V
Max Breakdown Voltage :
50V
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Power Dissipation :
357mW
Collector Emitter Breakdown Voltage :
50V
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Resistor - Emitter Base (R2) :
47k Ω
Voltage - Rated DC :
50V
Max Collector Current :
100mA
Packaging :
Tape and Reel (TR)
Current Rating :
100mA
Factory Lead Time :
2 Weeks
Transistor Type :
2 NPN - Pre-Biased (Dual)
Element Configuration :
Dual
Base Part Number :
NSBC1*
Number of Terminations :
6
Min Operating Temperature :
-55°C
Resistor - Base (R1) :
2.2k Ω
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
250mV
ECCN Code :
EAR99
Surface Mount :
yes
Datasheets
NSBC123JDXV6T1
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi NSBC123JDXV6T1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Package / Case:SOT-563, SOT-666, Mounting Type:Surface Mount, Base Part Number:NSBC1*, Number of Terminations:6, NSBC123JDXV6T1 pinout, NSBC123JDXV6T1 datasheet PDF, NSBC123JDXV6T1 amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi NSBC123JDXV6T1 ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSBC123JDXV6T1


NSBC123JDXV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at

The ON Semiconductor NSBC123JDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. This device is designed to provide a low-cost, space-saving solution for applications requiring two NPN transistors. It features a maximum power dissipation of 0.5W and a maximum collector-emitter voltage of 30V.

Features of the NSBC123JDXV6T1G include a low-cost, space-saving solution, a maximum power dissipation of 0.5W, a maximum collector-emitter voltage of 30V, and a low-noise operation. It also has a high-speed switching capability and a low-saturation voltage.

The NSBC123JDXV6T1G is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and automotive applications. It is also suitable for use in consumer electronics, such as TVs, DVD players, and gaming consoles.
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