NSBC123EPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

250mV

Resistor - Emitter Base (R2) :

2.2k Ω

hFE Min :

8

Resistor - Base (R1) :

2.2k Ω

Number of Pins :

6

Width :

1.2mm

Max Power Dissipation :

500mW

Base Part Number :

NSBC1*

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Voltage - Rated DC :

50V

Polarity :

NPN, PNP

Number of Channels :

2

RoHS Status :

RoHS Compliant

Element Configuration :

Dual

Max Operating Temperature :

150°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Continuous Collector Current :

100mA

Number of Elements :

2

Length :

1.6mm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Package / Case :

SOT-563, SOT-666

JESD-609 Code :

e3

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

550μm

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Published :

2012

Weight :

8.193012mg

Transistor Application :

SWITCHING

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Pin Count :

6

Qualification Status :

Not Qualified

Surface Mount :

yes

Current Rating :

100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Terminal Finish :

Tin (Sn)