NSBC123EPDXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Base Part Number :

NSBC1*

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Max Power Dissipation :

500mW

Number of Elements :

2

Current - Collector Cutoff (Max) :

500nA

Reach Compliance Code :

Unknown

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

50V

Published :

2008

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

2.2k Ω

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Current Rating :

100mA

Number of Terminations :

6

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Min Operating Temperature :

-55°C

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

250mV

Polarity :

PNP

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

JESD-609 Code :

e3

hFE Min :

8

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Resistor - Base (R1) :

2.2k Ω

JESD-30 Code :

R-PDSO-F6

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Collector Current :

100mA

Mount :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power Dissipation :

357mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Pin Count :

6