NSBC115TPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Base Part Number :

NSBC1*

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Resistor - Base (R1) :

100k Ω

JESD-609 Code :

e3

Package / Case :

SOT-963

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Published :

2008

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Number of Pins :

6

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

339mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Pin Count :

6

hFE Min :

160

Surface Mount :

yes

Pbfree Code :

yes

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTOR RATIO

Min Operating Temperature :

-55°C

Terminal Form :

Flat

Polarity :

NPN, PNP