NSBC114YPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

50V

Pin Count :

6

Element Configuration :

Dual

Polarity :

NPN, PNP

JESD-609 Code :

e3

Max Power Dissipation :

339mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Form :

Flat

Base Part Number :

NSBC1*

hFE Min :

80

Radiation Hardening :

No

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Published :

2010

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Number of Elements :

2

Lead Free :

Lead Free

ECCN Code :

EAR99

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Resistor - Base (R1) :

10k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 4.7

Resistor - Emitter Base (R2) :

47k Ω

Package / Case :

SOT-963

Max Operating Temperature :

150°C

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING