NSBC114YDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Breakdown Voltage :

50V

hFE Min :

80

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 4.7

Terminal Form :

Flat

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

47k Ω

Mounting Type :

Surface Mount

Number of Terminations :

6

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

10k Ω

Surface Mount :

yes

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Max Power Dissipation :

339mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

Base Part Number :

NSBC1*

Radiation Hardening :

No

Published :

2010

Max Collector Current :

100mA

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Pin Count :

6

Package / Case :

SOT-963

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6