NSBC114TDXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Element Configuration :

Dual

Terminal Form :

Flat

Max Power Dissipation :

500mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Base Part Number :

NSBC1*

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Polarity :

NPN

Resistor - Base (R1) :

10k Ω

Power Dissipation :

357mW

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Number of Pins :

6

Voltage - Rated DC :

50V

Lead Free :

Lead Free

Published :

2010

Factory Lead Time :

17 Weeks

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Current Rating :

100mA

Qualification Status :

Not Qualified

Surface Mount :

yes

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT IN BIAS RESISTOR

hFE Min :

160

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260