NSBC114EPDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

Resistor - Base (R1) :

10k Ω

Resistor - Emitter Base (R2) :

10k Ω

JESD-609 Code :

e3

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

357mW

Element Configuration :

Dual

hFE Min :

35

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Polarity :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Power Dissipation :

500mW

Lead Free :

Lead Free

Pin Count :

6

Number of Terminations :

6

Base Part Number :

NSBC1*

Number of Elements :

2

Max Collector Current :

100mA

Current Rating :

100mA

Terminal Form :

Flat

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Published :

2010

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Qualification Status :

Not Qualified

Factory Lead Time :

17 Weeks

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260