NSBC114EPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Pbfree Code :

yes

Terminal Form :

Flat

hFE Min :

35

Base Part Number :

NSBC1*

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Surface Mount :

yes

Radiation Hardening :

No

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Voltage - Rated DC :

50V

Collector Emitter Saturation Voltage :

250mV

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.2mm

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Continuous Collector Current :

100mA

Factory Lead Time :

17 Weeks

Collector Emitter Breakdown Voltage :

50V

Height :

550μm

Number of Elements :

2

Max Breakdown Voltage :

50V

Published :

2008

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Number of Terminations :

6

ECCN Code :

EAR99

Number of Pins :

6

Resistor - Base (R1) :

10k Ω

Current Rating :

100mA

Length :

1.6mm

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

500mW

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Weight :

8.193012mg

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Resistor - Emitter Base (R2) :

10k Ω

Min Operating Temperature :

-55°C