NGB8206N

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

150W

Td (on/off) @ 25°C :

-/5μs

Terminal Finish :

Tin/Lead (Sn80Pb20)

Fall Time-Max (tf) :

14000ns

Current - Collector Pulsed (Icm) :

50A

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Pin Count :

3

Moisture Sensitivity Level (MSL) :

2 (1 Year)

JESD-609 Code :

e0

Base Part Number :

NGB8206

Terminal Form :

Gull wing

Input Type :

Logic

Power - Max :

150W

Case Connection :

COLLECTOR

Published :

2009

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

2.1V

Number of Elements :

1

Turn Off Time-Nom (toff) :

18500 ns

Rise Time-Max :

8000ns

Polarity/Channel Type :

N-Channel

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

390V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Time :

6500 ns

Current - Collector (Ic) (Max) :

20A

Packaging :

Tube

Gate-Emitter Voltage-Max :

15V

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

AUTOMOTIVE IGNITION

Test Condition :

300V, 9A, 1k Ω, 5V

Number of Terminations :

2