NGB8204NT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

RoHS Status :

Non-RoHS Compliant

Power Dissipation :

115W

Collector Emitter Breakdown Voltage :

430V

Base Part Number :

NGB8204

Current Rating :

18A

Gate-Emitter Thr Voltage-Max :

1.9V

Number of Pins :

3

Max Collector Current :

18A

Polarity/Channel Type :

N-Channel

Rise Time-Max :

7000ns

Turn On Time :

5200 ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Published :

2006

Mount :

Surface Mount

Terminal Form :

Gull wing

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

13000 ns

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2.5V @ 4V, 15A

Number of Elements :

1

Pin Count :

3

Transistor Application :

AUTOMOTIVE IGNITION

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

400V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate-Emitter Voltage-Max :

18V

Terminal Finish :

Tin/Lead (Sn80Pb20)

Peak Reflow Temperature (Cel) :

235

Max Power Dissipation :

115W

Qualification Status :

Not Qualified

Number of Terminations :

2

Fall Time-Max (tf) :

15000ns

Input Type :

Logic

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Terminal Position :

Single

Collector Emitter Voltage (VCEO) :

2.5V

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

JESD-609 Code :

e0

Mounting Type :

Surface Mount

Current - Collector Pulsed (Icm) :

50A