NGB8202NT4G

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

150W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Time-Nom (toff) :

18500 ns

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

440V

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Number of Pins :

3

Td (on/off) @ 25°C :

-/5μs

Turn On Time :

6500 ns

Gate-Emitter Voltage-Max :

15V

Mount :

Surface Mount

ECCN Code :

EAR99

Voltage - Rated DC :

400V

Number of Elements :

1

Rise Time-Max :

8000ns

Lead Free :

Lead Free

Max Collector Current :

20A

Gate-Emitter Thr Voltage-Max :

2.1V

Current - Collector Pulsed (Icm) :

50A

Pbfree Code :

yes

Case Connection :

COLLECTOR

Radiation Hardening :

No

Max Power Dissipation :

150W

Operating Temperature :

-55°C~175°C TJ

Current Rating :

20A

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

440V

Base Part Number :

NGB8202

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Pin Count :

3

Input Type :

Logic

Max Breakdown Voltage :

440V

Fall Time-Max (tf) :

14000ns

Test Condition :

300V, 9A, 1k Ω, 5V

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single