NE856M02-T1-AZ

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Mfr.Part #
NE856M02-T1-AZ
Manufacturer
Renesas Electronics Corporation
Package / Case
TO-243AA
Datasheet
Download
Description
SAME AS 2SC5336 NPN SILICON AMPL
Stock
11,168
In Stock :
11,168

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Transistors - Bipolar (BJT) - RF
Mounting Type :
Surface Mount
Output Power :
1.2W
Max Breakdown Voltage :
12V
Operating Temperature :
150°C TJ
Max Collector Current :
100mA
Base Part Number :
NE856
Noise Figure (dB Typ @ f) :
1.1dB @ 1GHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Mount :
Surface Mount
Package / Case :
TO-243AA
Packaging :
Tape and Reel (TR)
Transistor Type :
NPN
Emitter Base Voltage (VEBO) :
3V
Max Power Dissipation :
1.2W
hFE Min :
250
Collector Emitter Breakdown Voltage :
12V
Gain :
12dB
Collector Emitter Voltage (VCEO) :
12V
Element Configuration :
Single
Radiation Hardening :
No
RoHS Status :
RoHS Compliant
Power Dissipation :
1.2W
Lead Free :
Lead Free
Number of Pins :
4
Collector Base Voltage (VCBO) :
20V
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 20mA 10V
Frequency :
6.5GHz
Continuous Collector Current :
100mA
Datasheets
NE856M02-T1-AZ
Introducing Transistors - Bipolar (BJT) - RF Renesas Electronics Corporation NE856M02-T1-AZ from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:NE856, Package / Case:TO-243AA, Gain:12dB, Number of Pins:4, NE856M02-T1-AZ pinout, NE856M02-T1-AZ datasheet PDF, NE856M02-T1-AZ amp .Beyond Transistors - Bipolar (BJT) - RF Renesas Electronics Corporation NE856M02-T1-AZ ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation NE856M02-T1-AZ


NE856M02-T1-AZ datasheet pdf and Transistors - Bipolar (BJT) - RF product details from CEL stock available at

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