NE85630-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.2dB @ 1GHz ~ 2GHz

Number of Pins :

3

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Package / Case :

SC-70, SOT-323

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 7mA 3V

Collector-Base Capacitance-Max :

1.5pF

Qualification Status :

Not Qualified

Number of Terminations :

3

Additional Feature :

LOW NOISE

Reach Compliance Code :

Unknown

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Mounting Type :

Surface Mount

Configuration :

Single

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Gain :

6dB ~ 12dB

Voltage - Collector Emitter Breakdown (Max) :

12V

Highest Frequency Band :

L B

Terminal Position :

Dual

Number of Elements :

1

Polarity/Channel Type :

NPN

Power - Max :

150mW

RoHS Status :

Non-RoHS Compliant

Base Part Number :

NE85630

Transition Frequency :

4500MHz

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

100mA

Frequency - Transition :

4.5GHz