NE856M02-AZ

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

12V

Max Operating Temperature :

150°C

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Element Configuration :

Single

Base Part Number :

NE856

Min Operating Temperature :

-65°C

Polarity :

NPN

Supplier Device Package :

SOT-89

Package / Case :

TO-243AA

Power - Max :

1.2W

Max Collector Current :

100mA

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

12V

Gain :

12dB

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

100mA

Packaging :

Bulk

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Max Power Dissipation :

1.2W

hFE Min :

250

Continuous Collector Current :

100mA

Frequency - Transition :

6.5GHz

Collector Base Voltage (VCBO) :

20V

Voltage - Collector Emitter Breakdown (Max) :

12V

Emitter Base Voltage (VEBO) :

3V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA 10V

Number of Pins :

4