NE85639R-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

200mW

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

12V

Transistor Application :

AMPLIFIER

Max Breakdown Voltage :

12V

Package / Case :

SOT-143R

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Power Dissipation :

200mW

Number of Elements :

1

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Packaging :

Cut Tape (CT)

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Terminal Position :

Dual

Transistor Element Material :

SILICON

Collector-Base Capacitance-Max :

0.9pF

Base Part Number :

NE85639

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.1dB @ 1GHz

Number of Terminations :

4

Gain :

13.5dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA 10V

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Element Configuration :

Single

Mounting Type :

Surface Mount

Frequency - Transition :

9GHz

Transition Frequency :

9000MHz

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant