NE85639-T1-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Min Operating Temperature :

-65°C

Collector Base Voltage (VCBO) :

20V

Package / Case :

TO-253-4, TO-253AA

Current - Collector (Ic) (Max) :

100mA

Output Power :

200mW

Radiation Hardening :

No

Power Dissipation :

200mW

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA 10V

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Transistor Type :

NPN

Frequency :

9GHz

Supplier Device Package :

SOT-143

Max Power Dissipation :

200mW

RoHS Status :

RoHS Compliant

Emitter Base Voltage (VEBO) :

3V

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Max Collector Current :

100mA

Lead Free :

Lead Free

Base Part Number :

NE85639

Gain :

13dB

Number of Pins :

4

Max Operating Temperature :

150°C

Voltage - Collector Emitter Breakdown (Max) :

12V

Max Frequency :

9GHz

Collector Emitter Voltage (VCEO) :

12V

Power - Max :

200mW

Frequency - Transition :

9GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)