NE85633-T1B-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

3

Number of Elements :

1

Collector Base Voltage (VCBO) :

20V

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Output Power :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

3V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA 10V

Radiation Hardening :

No

Pin Count :

3

Power Dissipation :

200mW

Terminal Position :

Dual

Transition Frequency :

7000MHz

Max Collector Current :

100mA

Frequency :

7GHz

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Gain :

11.5dB

Base Part Number :

NE85633

Collector Emitter Voltage (VCEO) :

12V

Max Power Dissipation :

200mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Number of Terminations :

3

Configuration :

Single

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Transistor Type :

NPN

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

100mA

ECCN Code :

EAR99

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN