NE85633-R25-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

12V

Min Operating Temperature :

-65°C

Max Operating Temperature :

150°C

Weight :

1.437803g

Continuous Collector Current :

100mA

Packaging :

Bulk

Gain :

11.5dB

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

100mA

Max Collector Current :

100mA

Frequency - Transition :

7GHz

Number of Pins :

3

Power - Max :

200mW

Radiation Hardening :

No

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

20V

Max Power Dissipation :

200mW

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Base Part Number :

NE85633

Polarity :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 20mA 10V

Voltage - Collector Emitter Breakdown (Max) :

12V

Operating Temperature :

150°C TJ

Frequency :

7GHz

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Breakdown Voltage :

12V

Mount :

Surface Mount

Supplier Device Package :

SOT-23

Moisture Sensitivity Level (MSL) :

1 (Unlimited)