NE664M04-T2-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation :

735mW

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 100mA 3V

Operating Temperature :

150°C TJ

Output Power :

735mW

Package / Case :

SOT-343F

Mounting Type :

Surface Mount

Gain :

12dB

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

1.5V

Collector Base Voltage (VCBO) :

13V

Frequency :

20GHz

Collector Emitter Voltage (VCEO) :

5V

Polarity :

NPN

Max Breakdown Voltage :

12V

Power - Max :

735mW

Radiation Hardening :

No

Supplier Device Package :

SOT-343F

Current Rating :

500mA

Min Operating Temperature :

-65°C

Voltage - Rated DC :

5V

Max Power Dissipation :

735mW

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

5V

Number of Pins :

4

Frequency - Transition :

20GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

5V

Base Part Number :

NE664

Max Frequency :

20GHz

Number of Elements :

1

Transistor Type :

NPN

RoHS Status :

RoHS Compliant

Continuous Collector Current :

500mA

Max Collector Current :

500mA

Max Operating Temperature :

150°C