NE662M04-T2-A

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Mfr.Part #
NE662M04-T2-A
Manufacturer
Renesas Electronics Corporation
Package / Case
SOT-343F
Datasheet
Download
Description
SAME AS 2SC5508 NPN SILICON AMPL
Stock
1
In Stock :
1

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Transistors - Bipolar (BJT) - RF
Frequency :
2GHz
Number of Elements :
1
Collector Base Voltage (VCBO) :
15V
Collector Emitter Breakdown Voltage :
3.3V
Gain Bandwidth Product :
25 GHz
Power Dissipation :
115mW
Continuous Collector Current :
35mA
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Max Breakdown Voltage :
3.3V
Max Collector Current :
35mA
Package / Case :
SOT-343F
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 5mA 2V
Noise Figure (dB Typ @ f) :
1.1dB @ 2GHz
Max Power Dissipation :
115mW
Number of Pins :
4
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Gain :
18dB
Output Power :
115mW
Height :
590μm
Width :
1.25mm
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
3.3V
Mount :
Surface Mount
Base Part Number :
NE662
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
1.5V
Transistor Type :
NPN
Length :
2mm
Datasheets
NE662M04-T2-A
Introducing Transistors - Bipolar (BJT) - RF Renesas Electronics Corporation NE662M04-T2-A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-343F, Number of Pins:4, Mounting Type:Surface Mount, Gain:18dB, Base Part Number:NE662, Operating Temperature:150°C TJ, NE662M04-T2-A pinout, NE662M04-T2-A datasheet PDF, NE662M04-T2-A amp .Beyond Transistors - Bipolar (BJT) - RF Renesas Electronics Corporation NE662M04-T2-A ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation NE662M04-T2-A


NE662M04-T2-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from CEL stock available at

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