NDT456P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Fall Time (Typ) :

70 ns

Terminal Form :

Gull wing

Turn On Delay Time :

10 ns

Operating Temperature :

-65°C~150°C TJ

Power Dissipation :

3W

Termination :

SMD/SMT

Number of Terminations :

4

Weight :

250.2mg

Lead Free :

Lead Free

Vgs (Max) :

±20V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Resistance :

30mOhm

Width :

6.7mm

Drain to Source Breakdown Voltage :

-30V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Current Rating :

-7.3A

ECCN Code :

EAR99

Threshold Voltage :

1.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3W Ta

Pbfree Code :

yes

Nominal Vgs :

1.5 V

Number of Channels :

1

Height :

1.8mm

Voltage - Rated DC :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

70 ns

Length :

6.7mm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 15V

Element Configuration :

Single

Factory Lead Time :

18 Weeks

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150°C

FET Type :

P-Channel

Transistor Element Material :

SILICON

Rise Time :

65ns

Number of Pins :

4

Dual Supply Voltage :

30V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.5A, 10V

Continuous Drain Current (ID) :

7.5A

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

20A

Operating Mode :

ENHANCEMENT MODE

Published :

2017

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)