NDT456P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

4

Rise Time :

65ns

Length :

6.7mm

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation-Max :

3W Ta

Mounting Type :

Surface Mount

Weight :

250.2mg

Terminal Finish :

Tin (Sn)

Current Rating :

-7.3A

Operating Temperature :

-65°C~150°C TJ

FET Type :

P-Channel

Termination :

SMD/SMT

Nominal Vgs :

1.5 V

Radiation Hardening :

No

Turn-Off Delay Time :

70 ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 15V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Threshold Voltage :

1.5V

Fall Time (Typ) :

70 ns

Turn On Delay Time :

10 ns

Number of Channels :

1

Resistance :

30mOhm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

-30V

Width :

6.7mm

Height :

1.8mm

Power Dissipation :

3W

Published :

2017

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Gate to Source Voltage (Vgs) :

20V

Dual Supply Voltage :

30V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

7.5A

Voltage - Rated DC :

-30V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Element Configuration :

Single

ECCN Code :

EAR99

Number of Pins :

4

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)