NDT451AN
- Mfr.Part #
- NDT451AN
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 3,926
- In Stock :
- 3,926
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 1.6 V
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 29 ns
- Threshold Voltage :
- 1.6V
- Published :
- 1998
- Fall Time (Typ) :
- 10 ns
- Number of Terminations :
- 4
- Resistance :
- 35mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 3W Ta
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- -65°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 25A
- Power Dissipation :
- 3W
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 188mg
- Height :
- 1.7mm
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Length :
- 6.7mm
- Turn On Delay Time :
- 12 ns
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 7.2A, 10V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- Rise Time :
- 13ns
- Current - Continuous Drain (Id) @ 25°C :
- 7.2A Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Factory Lead Time :
- 18 Weeks
- Lead Free :
- Lead Free
- Additional Feature :
- FAST SWITCHING
- Terminal Position :
- Dual
- Voltage - Rated DC :
- 30V
- Width :
- 3.7mm
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 7.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 720pF @ 15V
- Current Rating :
- 7.1A
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Datasheets
- NDT451AN
NDT451AN Documents

N-Channel Tape & Reel (TR) 35m Ω @ 7.2A, 10V ±20V 720pF @ 15V 30nC @ 10V TO-261-4, TO-261AA
Description
The NDT451AN is an N-Channel Enhancement Mode Field Effect Transistor. Power SOT N-Channel enhancement mode power field-effect transistors are created using the patented, high cell density DMOS technology of ON Semiconductor. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high-density technology. These devices are best suited for low voltage tasks that need quick switching, little in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion.
Features
-
High-density cell design for extremely low RDS(ON)
-
High power and current handling capability in a widely used surface mount package
-
7.2A, 30V. RDS(ON) = 0.035W @ VGS = 10V
RDS(ON) = 0.05W @ VGS = 4.5V
-
Low operating voltages
-
Very low sensitivity
Applications
-
Amplifiers
-
Switching apparatus
-
Controlling
-
Electrical signals
-
Microchips
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