NDT451AN

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Mfr.Part #
NDT451AN
Manufacturer
Fairchild Semiconductor
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Stock
3,926
In Stock :
3,926

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
ECCN Code :
EAR99
Voltage - Rated DC :
30V
Factory Lead Time :
18 Weeks
Number of Pins :
4
Operating Temperature :
-65°C~150°C TJ
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Drain to Source Breakdown Voltage :
30V
Turn On Delay Time :
12 ns
Current - Continuous Drain (Id) @ 25°C :
7.2A Ta
FET Type :
N-Channel
Transistor Application :
SWITCHING
Package / Case :
TO-261-4, TO-261AA
Input Capacitance (Ciss) (Max) @ Vds :
720pF @ 15V
Lead Free :
Lead Free
Weight :
188mg
Nominal Vgs :
1.6 V
Resistance :
35mOhm
Terminal Position :
Dual
Number of Terminations :
4
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Additional Feature :
FAST SWITCHING
Element Configuration :
Single
Case Connection :
DRAIN
Current Rating :
7.1A
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
35m Ω @ 7.2A, 10V
Pulsed Drain Current-Max (IDM) :
25A
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Height :
1.7mm
Continuous Drain Current (ID) :
7.2A
Length :
6.7mm
Rise Time :
13ns
JESD-609 Code :
e3
Published :
1998
Contact Plating :
Tin
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
REACH SVHC :
No SVHC
Fall Time (Typ) :
10 ns
Power Dissipation :
3W
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Width :
3.7mm
Turn-Off Delay Time :
29 ns
Power Dissipation-Max :
3W Ta
Mount :
Surface Mount
Threshold Voltage :
1.6V
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDT451AN from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Mounting Type:Surface Mount, NDT451AN pinout, NDT451AN datasheet PDF, NDT451AN amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDT451AN ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor NDT451AN


N-Channel Tape & Reel (TR) 35m Ω @ 7.2A, 10V ±20V 720pF @ 15V 30nC @ 10V TO-261-4, TO-261AA

Description


The NDT451AN is an N-Channel Enhancement Mode Field Effect Transistor. Power SOT N-Channel enhancement mode power field-effect transistors are created using the patented, high cell density DMOS technology of ON Semiconductor. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high-density technology. These devices are best suited for low voltage tasks that need quick switching, little in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion.



Features


  • High-density cell design for extremely low RDS(ON)

  • High power and current handling capability in a widely used surface mount package

  • 7.2A, 30V. RDS(ON) = 0.035W @ VGS = 10V

                      RDS(ON) = 0.05W @ VGS = 4.5V

  • Low operating voltages

  • Very low sensitivity



Applications


  • Amplifiers

  • Switching apparatus

  • Controlling

  • Electrical signals

  • Microchips


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