NDT451AN

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

12 ns

Rise Time :

13ns

Voltage - Rated DC :

30V

Additional Feature :

FAST SWITCHING

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

25A

Published :

1998

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

Number of Elements :

1

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

35m Ω @ 7.2A, 10V

Length :

6.7mm

Power Dissipation :

3W

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Number of Pins :

4

Weight :

188mg

ECCN Code :

EAR99

Lead Free :

Lead Free

Resistance :

35mOhm

Radiation Hardening :

No

Nominal Vgs :

1.6 V

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

7.2A

Pbfree Code :

yes

Height :

1.7mm

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

29 ns

Element Configuration :

Single

Factory Lead Time :

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 15V

FET Type :

N-Channel

Power Dissipation-Max :

3W Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.6V

Width :

3.7mm

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Fall Time (Typ) :

10 ns

Current Rating :

7.1A