NDT453N
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- Mfr.Part #
- NDT453N
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8A SOT-223-4
- Stock
- 40,362
- In Stock ：
- 40,362
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 28mOhm @ 8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 890pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Power Dissipation-Max :
- 3W Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Supplier Device Package :
- SOT-223-4
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Drain to Source Voltage (Vdss) :
- 30V
- Datasheets
- NDT453N
N-Channel Tape & Reel (TR) 28mOhm @ 8A, 10V ±20V 890pF @ 15V 35nC @ 10V 30V TO-261-4, TO-261AA
NDT453N Description
Using Fairchild's patented, high cell density DMOS technology, power SOT N-Channel enhancement mode power field effect transistors are created. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high density technology. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDT453N Features
-
8A, 30V. RDS(ON) = 0.028W @ VGS = 10V.
-
High density cell design for extremely low RDS(ON).
-
High power and current handling capability in a widely used surface mount package.
NDT453N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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