NDT456P
- Mfr.Part #
- NDT456P
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- P-CHANNEL ENHANCEMENT MODE FIELD
- Stock
- 29,818
- In Stock :
- 29,818
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Nominal Vgs :
- 1.5 V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 3W Ta
- Element Configuration :
- Single
- Factory Lead Time :
- 18 Weeks
- Height :
- 1.8mm
- Vgs (Max) :
- ±20V
- Width :
- 6.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Length :
- 6.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1440pF @ 15V
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- -30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Ta
- Mount :
- Surface Mount
- Number of Pins :
- 4
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Voltage - Rated DC :
- -30V
- Current Rating :
- -7.3A
- Dual Supply Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 1.5V
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Fall Time (Typ) :
- 70 ns
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 20A
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 7.5A, 10V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Published :
- 2017
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 3W
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 65ns
- Turn On Delay Time :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- FET Type :
- P-Channel
- Turn-Off Delay Time :
- 70 ns
- Continuous Drain Current (ID) :
- 7.5A
- Case Connection :
- DRAIN
- Weight :
- 250.2mg
- Resistance :
- 30mOhm
- Datasheets
- NDT456P
NDT456P Documents

P-Channel Tape & Reel (TR) 30m Ω @ 7.5A, 10V ±20V 1440pF @ 15V 67nC @ 10V TO-261-4, TO-261AA
NDT456P Description
NDT456P is a P-Channel Enhancement Mode Field Effect Transistor. Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.
NDT456P Features
-
-7.5 A, -30 V
RDS(ON) = 0.030 Ω @ VGS = -10 V
RDS(ON) = 0.045 Ω @ VGS = -4.5 V
-
High-density cell design for extremely low RDS(ON)
-
High power and current handling capability in a widely used surface mount package
-
In the SOT-223-4 package
-
Power dissipation: 3W
NDT456P Applications
-
Power Management
-
Motor Drive & Control
-
Notebook computer power management
-
Battery-powered circuits
-
DC motor control
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