NDT456P

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Mfr.Part #
NDT456P
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
P-CHANNEL ENHANCEMENT MODE FIELD
Stock
29,818
In Stock :
29,818

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
1.8mm
Operating Temperature :
-65°C~150°C TJ
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
30m Ω @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
67nC @ 10V
Dual Supply Voltage :
30V
Element Configuration :
Single
Radiation Hardening :
No
Voltage - Rated DC :
-30V
Mounting Type :
Surface Mount
Max Junction Temperature (Tj) :
150°C
Lead Free :
Lead Free
Pbfree Code :
yes
Rise Time :
65ns
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
18 Weeks
Transistor Application :
SWITCHING
Terminal Form :
Gull wing
Length :
6.7mm
Current - Continuous Drain (Id) @ 25°C :
7.5A Ta
Nominal Vgs :
1.5 V
FET Type :
P-Channel
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Width :
6.7mm
Published :
2017
Continuous Drain Current (ID) :
7.5A
Turn On Delay Time :
10 ns
Number of Terminations :
4
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
-30V
Power Dissipation-Max :
3W Ta
Vgs(th) (Max) @ Id :
3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
1440pF @ 15V
Package / Case :
TO-261-4, TO-261AA
Case Connection :
DRAIN
Number of Elements :
1
Threshold Voltage :
1.5V
Resistance :
30mOhm
Number of Pins :
4
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Power Dissipation :
3W
Turn-Off Delay Time :
70 ns
Pulsed Drain Current-Max (IDM) :
20A
Terminal Position :
Dual
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Weight :
250.2mg
Mount :
Surface Mount
Termination :
SMD/SMT
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Fall Time (Typ) :
70 ns
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Current Rating :
-7.3A
Introducing Transistors - FETs, MOSFETs - Single onsemi NDT456P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, NDT456P pinout, NDT456P datasheet PDF, NDT456P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NDT456P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDT456P


P-Channel Tape & Reel (TR) 30m Ω @ 7.5A, 10V ±20V 1440pF @ 15V 67nC @ 10V TO-261-4, TO-261AA

NDT456P Description


NDT456P is a P-Channel Enhancement Mode Field Effect Transistor. Power SOT P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.



NDT456P Features


  • -7.5 A, -30 V

   RDS(ON) = 0.030 Ω @ VGS = -10 V

   RDS(ON) = 0.045 Ω @ VGS = -4.5 V

  • High-density cell design for extremely low RDS(ON)

  • High power and current handling capability in a widely used surface mount package

  • In the SOT-223-4 package

  • Power dissipation: 3W



NDT456P Applications


  • Power Management

  • Motor Drive & Control

  • Notebook computer power management

  • Battery-powered circuits

  • DC motor control


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