NDT456P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.5V

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Number of Channels :

1

Turn On Delay Time :

10 ns

Rise Time :

65ns

Factory Lead Time :

18 Weeks

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Voltage - Rated DC :

-30V

Lead Free :

Lead Free

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Published :

2017

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 15V

Nominal Vgs :

1.5 V

Turn-Off Delay Time :

70 ns

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Power Dissipation :

3W

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Termination :

SMD/SMT

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Pulsed Drain Current-Max (IDM) :

20A

Mount :

Surface Mount

Number of Elements :

1

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Number of Pins :

4

Width :

6.7mm

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.5A, 10V

Height :

1.8mm

Weight :

250.2mg

Max Junction Temperature (Tj) :

150°C

Resistance :

30mOhm

Package / Case :

TO-261-4, TO-261AA

Fall Time (Typ) :

70 ns

Current Rating :

-7.3A

Power Dissipation-Max :

3W Ta

Element Configuration :

Single

Number of Terminations :

4

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-30V

Length :

6.7mm

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

7.5A