NDT456P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Nominal Vgs :

1.5 V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3W Ta

Element Configuration :

Single

Factory Lead Time :

18 Weeks

Height :

1.8mm

Vgs (Max) :

±20V

Width :

6.7mm

Package / Case :

TO-261-4, TO-261AA

Length :

6.7mm

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 15V

Operating Temperature :

-65°C~150°C TJ

Terminal Form :

Gull wing

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Mount :

Surface Mount

Number of Pins :

4

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Voltage - Rated DC :

-30V

Current Rating :

-7.3A

Dual Supply Voltage :

30V

Mounting Type :

Surface Mount

Threshold Voltage :

1.5V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

70 ns

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

20A

Transistor Application :

SWITCHING

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.5A, 10V

Number of Elements :

1

Lead Free :

Lead Free

Published :

2017

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

3W

Terminal Position :

Dual

Number of Terminations :

4

Terminal Finish :

Tin (Sn)

Rise Time :

65ns

Turn On Delay Time :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

FET Type :

P-Channel

Turn-Off Delay Time :

70 ns

Continuous Drain Current (ID) :

7.5A

Case Connection :

DRAIN

Weight :

250.2mg

Resistance :

30mOhm