NDT452AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.7mm

Rise Time :

20ns

Transistor Application :

SWITCHING

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

FET Type :

P-Channel

Power Dissipation-Max :

3W Ta

Contact Plating :

Tin

Terminal Form :

Gull wing

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Voltage - Rated DC :

-30V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Pbfree Code :

yes

JESD-609 Code :

e3

Turn-Off Delay Time :

40 ns

Power Dissipation :

3W

Operating Mode :

ENHANCEMENT MODE

Height :

1.8mm

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

65m Ω @ 5A, 10V

ECCN Code :

EAR99

Threshold Voltage :

-1.6V

Number of Terminations :

4

Turn On Delay Time :

9 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Resistance :

65mOhm

Mount :

Surface Mount

Current Rating :

-5A

Continuous Drain Current (ID) :

5A

Fall Time (Typ) :

19 ns

Package / Case :

TO-261-4, TO-261AA

Number of Channels :

1

Nominal Vgs :

1.6 V

Current :

5A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 15V

Drain to Source Breakdown Voltage :

-30V

Dual Supply Voltage :

30V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Max Junction Temperature (Tj) :

150°C

Published :

1997

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE