NDT452AP
- Mfr.Part #
- NDT452AP
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5A SOT-223-4
- Stock
- 1,948
- In Stock :
- 1,948
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 1.6 V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 18 Weeks
- Number of Channels :
- 1
- Turn On Delay Time :
- 9 ns
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Max Junction Temperature (Tj) :
- 150°C
- Dual Supply Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 690pF @ 15V
- FET Type :
- P-Channel
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 1997
- Resistance :
- 65mOhm
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- -30V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Current :
- 5A
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Current Rating :
- -5A
- Number of Pins :
- 4
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 40 ns
- Number of Terminations :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Case Connection :
- DRAIN
- Width :
- 6.7mm
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Height :
- 1.8mm
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 20ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 5A, 10V
- Power Dissipation-Max :
- 3W Ta
- Fall Time (Typ) :
- 19 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 3W
- Threshold Voltage :
- -1.6V
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Drain to Source Breakdown Voltage :
- -30V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Datasheets
- NDT452AP

P-Channel Tape & Reel (TR) 65m Ω @ 5A, 10V ±20V 690pF @ 15V 30nC @ 10V TO-261-4, TO-261AA
NDT452AP Description
The NDT452AP is a P-channel logic level enhancement mode Field-Effect Transistor using high cell density and DMOS technology. This very high-density process has been specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT452AP is particularly suited for low voltage applications such as notebook computer power management and DC motor control.
NDT452AP Features
-
-5A, -30V.
-RDS(ON) = 0.065 Ω @ VGS = -10V
-RDS(ON) = 0.1 Ω @ VGS = -4.5V
-
High-density cell design for extremely low RDS(ON)
-
High power and current handling capability in a widely used surface mount package
-
Gate Source Voltage: +20v
-
Operating and Storage Temperature Range: -65 to 150°C
NDT452AP Applications
-
Notebook computer power management
-
DC motor control
-
Motor Drive & Control
-
Computers
-
Computer Peripherals
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