NDT452AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-30V

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Number of Terminations :

4

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Current :

5A

Turn On Delay Time :

9 ns

Radiation Hardening :

No

Turn-Off Delay Time :

40 ns

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

P-Channel

Number of Channels :

1

Voltage - Rated DC :

-30V

Resistance :

65mOhm

Nominal Vgs :

1.6 V

Fall Time (Typ) :

19 ns

Power Dissipation :

3W

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5A

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Package / Case :

TO-261-4, TO-261AA

Current Rating :

-5A

Rise Time :

20ns

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Pbfree Code :

yes

Published :

1997

Dual Supply Voltage :

30V

Number of Pins :

4

Power Dissipation-Max :

3W Ta

Height :

1.8mm

Rds On (Max) @ Id, Vgs :

65m Ω @ 5A, 10V

Threshold Voltage :

-1.6V

Operating Temperature :

-65°C~150°C TJ

Width :

6.7mm

Number of Elements :

1

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 15V

REACH SVHC :

No SVHC

Factory Lead Time :

18 Weeks

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE