NDT455N
- Mfr.Part #
- NDT455N
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11.5A SOT223-4
- Stock
- 47,379
- In Stock :
- 47,379
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- 20V
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 3W Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- TO-261-4, TO-261AA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1220pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Supplier Device Package :
- SOT-223-4
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 11.5A, 10V
- Mounting Type :
- Surface Mount
- Datasheets
- NDT455N

N-Channel Tape & Reel (TR) 15mOhm @ 11.5A, 10V 20V 1220pF @ 15V 61nC @ 10V 30V TO-261-4, TO-261AA
NDT455N Description
This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These devices are best suited for low voltage tasks that need quick switching, little in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion.
NDT455N Features
-
11.5 A, 30 V. RDS(ON) = 0.015 W @ VGS = 10 V
-
High density cell design for extremely low RDS(ON).
-
High power and current handling capability in a widely used surface mount package.
NDT455N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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