NDT454P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.7mm

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Power Dissipation :

3W

Turn On Delay Time :

10 ns

Vgs (Max) :

±20V

Dual Supply Voltage :

-30V

Operating Mode :

ENHANCEMENT MODE

Width :

3.7mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Length :

6.7mm

ECCN Code :

EAR99

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 15V

RoHS Status :

ROHS3 Compliant

Current Rating :

-5.9A

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Radiation Hardening :

No

Weight :

250.2mg

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Threshold Voltage :

-2.7V

Terminal Finish :

Tin (Sn)

Rise Time :

18ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-5.9A

Current - Continuous Drain (Id) @ 25°C :

5.9A Ta

Number of Pins :

4

Turn-Off Delay Time :

80 ns

Mount :

Surface Mount

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

Package / Case :

TO-261-4, TO-261AA

Operating Temperature :

-65°C~150°C TJ

Voltage - Rated DC :

-30V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Resistance :

50mOhm

Terminal Form :

Gull wing

Termination :

SMD/SMT

Terminal Position :

Dual

Element Configuration :

Single

Number of Terminations :

4

Mounting Type :

Surface Mount

Power Dissipation-Max :

3W Ta

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.9A, 10V