NDT454P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Transistor Application :

SWITCHING

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Weight :

250.2mg

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-30V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Single

Power Dissipation :

3W

Dual Supply Voltage :

-30V

Width :

3.7mm

Published :

1997

Resistance :

50mOhm

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

45 ns

Continuous Drain Current (ID) :

-5.9A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 15V

Mount :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

3W Ta

Lead Free :

Lead Free

Case Connection :

DRAIN

Voltage - Rated DC :

-30V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-65°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Factory Lead Time :

18 Weeks

Number of Terminations :

4

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

5.9A Ta

Turn On Delay Time :

10 ns

Current Rating :

-5.9A

Length :

6.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.9A, 10V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Number of Pins :

4

Threshold Voltage :

-2.7V

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Height :

1.7mm

Turn-Off Delay Time :

80 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Number of Elements :

1

Rise Time :

18ns

Gate to Source Voltage (Vgs) :

20V