NDF06N60ZH

Manufacturer :

Sanyo

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1107pF @ 25V

Surface Mount :

No

Element Configuration :

Single

Published :

2006

Lead Free :

Lead Free

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

15 Weeks

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

600V

Mounting Type :

Through Hole

ECCN Code :

EAR99

Packaging :

Tube

Fall Time (Typ) :

28 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Power Dissipation-Max :

35W Tc

Radiation Hardening :

No

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Turn On Delay Time :

13 ns

Rise Time :

17ns

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7.1A

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

28A

Number of Pins :

3

Number of Elements :

1

JESD-609 Code :

e3

Turn-Off Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Tin (Sn)

Case Connection :

Isolated