NDF06N60ZG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Number of Terminations :

3

FET Type :

N-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

113 mJ

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1.107pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

28A

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

600V

Qualification Status :

COMMERCIAL

Surface Mount :

No

Mounting Type :

Through Hole

Power Dissipation-Max :

35W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

7.1A

JESD-609 Code :

e3

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

7.1A Tc